Nxp Semiconductors N/A BCX 17 PNP Case type SOT 23 I(C) -0.5 BCX17 Data Sheet
Product codes
BCX17
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BCX17; BCX18
CHARACTERISTICS
T
T
j
= 25
°C unless otherwise specified.
Note
1.
V
BE
decreases by approximately
−2 mV/°C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
−20 V
−
−
−100 nA
I
E
= 0; V
CB
=
−20 V; T
j
= 150
°C
−
−
−5
μA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
−5 V
−
−
−100 nA
h
FE
DC current gain
I
C
=
−100 mA; V
CE
=
−1 V
100
−
600
I
C
=
−300 mA; V
CE
=
−1 V
70
−
−
I
C
=
−500 mA; V
CE
=
−1 V
40
−
−
V
CEsat
collector-emitter saturation voltage
I
C
=
−500 mA; I
B
=
−50 mA
−
−
−620 mV
V
BE
base-emitter voltage
I
C
=
−500 mA; V
CE
=
−1 V; note 1
−
−
−1.2
V
C
c
collector capacitance
I
E
= I
e
= 0; V
CB
=
−10 V; f = 1 MHz
−
9
−
pF
f
T
transition frequency
I
C
=
−10 mA; V
CE
=
−5 V; f = 100 MHz
80
−
−
MHz