Ixys IXGH30N60C3D1 IGBT 600V IXGH30N60C3D1 Data Sheet
Product codes
IXGH30N60C3D1
© 2011 IXYS CORPORATION, All Rights Reserved
DS100013B(05/11)
V
CES
= 600V
I
C110
= 30A
V
CE(sat)
≤≤≤≤≤ 3.0V
t
fi(typ)
= 47ns
GenX3
TM
600V IGBTs
w/ Diode
High-Speed PT IGBTs for
40-100 kHz Switching
40-100 kHz Switching
IXGH30N60C3D1
IXGT30N60C3D1
Symbol Test Conditions
Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600
V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M
Ω 600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C
= 25°C 60
A
I
C110
T
C
= 110°C
30
A
I
F110
T
C
= 110°C
30
A
I
CM
T
C
= 25°C, 1ms
150
A
SSOA
V
GE
= 15V, T
VJ
= 125°C, R
G
= 5
Ω I
CM
= 60
A
(RBSOA)
Clamped Inductive Load @
≤ V
CES
P
C
T
C
= 25°C
220
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10 seconds
260
°C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight
TO-268
4
g
TO-247
6 g
Symbol Test Conditions
Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250
μA, V
CE
= V
GE
3.0 5.5
V
I
CES
V
CE
= V
CES
, V
GE
= 0V
75
μA
T
J
= 125°C
1 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V
±100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1
2.6 3.0 V
T
J
= 125°C 1.8 V
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Anti-Parallel Ultra Fast Diode
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
G = Gate
C = Collector
E = Emitter Tab = Collector
TO-247 (IXGH)
G
C
E
C (Tab)
TO-268 (IXGT)
E
G
C (Tab)