Ixys IXGH72N60A3 IGBT 600V IXGH72N60A3 Data Sheet
Product codes
IXGH72N60A3
© 2008 IXYS CORPORATION, All rights reserved
GenX3
TM
600V IGBT
Symbol Test Conditions
Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600
V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M
Ω
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C
= 25°C (limited by leads)
75
A
I
C110
T
C
= 110°C
72
A
I
CM
T
C
= 25°C, 1ms
400
A
SSOA
V
GE
= 15V, T
VJ
= 125°C, R
G
= 3
Ω
I
CM
= 150
A
(RBSOA)
Clamped inductive load @
≤ 600V
P
C
T
C
= 25°C
540
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10 seconds
260
°C
M
d
Mounting torque (TO-247) 1.13/10
Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
DS99759B(07/08)
IXGH72N60A3
IXGT72N60A3
IXGT72N60A3
G = Gate
C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250
μA, V
GE
= 0V
600
V
V
GE(th)
I
C
= 250
μA, V
CE
= V
GE
3.0
5.0
V
I
CES
V
CE
= V
CES
75 μA
V
GE
= 0V
T
J
= 125°C
750 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V
±100 nA
V
CE(sat)
I
C
= 60A, V
GE
= 15V, Note 1
1.35 V
V
CES
= 600V
I
C110
= 72A
V
CE(sat)
≤≤≤≤≤ 1.35V
t
fi(typ)
= 250ns
TO-247 (IXGH)
G
C
E
C (TAB)
TO-268 (IXGT)
G
E
C (TAB)
Ultra Low Vsat PT IGBT for
up to 5kHz switching
up to 5kHz switching
Features
z
Optimized for low conduction losses
z
Square RBSOA
z
International standard packages
Advantages
z
High power density
z
Low gate drive requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
z
Inrush Current Protection Circuits