Intel i5-2450M AV8062700995805 Data Sheet

Product codes
AV8062700995805
Page of 134
When entering the S3 – Suspend-to-RAM (STR) state or S0 conditional self-refresh,
the processor core flushes pending cycles and then enters SDRAM ranks that are not
used by Intel graphics memory into self-refresh. The CKE signals remain LOW so the
SDRAM devices perform self-refresh.
The target behavior is to enter self-refresh for package C3 or deeper power states as
long as there are no memory requests to service. The target usage is shown in the
following table.
Table 19.
Targeted Memory State Conditions
Mode
Memory State with Processor Graphics
Memory State with External Graphics
C0, C1, C1E
Dynamic memory rank power-down based on
idle conditions.
Dynamic memory rank power-down based on
idle conditions.
C3, C6, C7
If the processor graphics engine is idle and
there are no pending display requests, then
enter self-refresh. Otherwise, use dynamic
memory rank power-down based on idle
conditions.
If there are no memory requests, then enter
self-refresh. Otherwise, use dynamic memory
rank power-down based on idle conditions.
S3
Self-Refresh Mode
Self-Refresh Mode
S4
Memory power-down (contents lost)
Memory power-down (contents lost)
Dynamic Power-Down
Dynamic power-down of memory is employed during normal operation. Based on idle
conditions, a given memory rank may be powered down. The IMC implements
aggressive CKE control to dynamically put the DRAM devices in a power-down state.
The processor core controller can be configured to put the devices in active power-
down (CKE de-assertion with open pages) or pre-charge power-down (CKE de-
assertion with all pages closed). Pre-charge power-down provides greater power
savings, but has a bigger performance impact since all pages will first be closed before
putting the devices in power-down mode.
If dynamic power-down is enabled, all ranks are powered up before doing a refresh
cycle and all ranks are powered down at the end of refresh.
DRAM I/O Power Management
Unused signals should be disabled to save power and reduce electromagnetic
interference. This includes all signals associated with an unused memory channel.
Clocks, CKE, ODE, and CS signals are controlled per DIMM rank and will be powered
down for unused ranks.
The I/O buffer for an unused signal should be tri-stated (output driver disabled), the
input receiver (differential sense-amp) should be disabled, and any DLL circuitry
related ONLY to unused signals should be disabled. The input path must be gated to
prevent spurious results due to noise on the unused signals (typically handled
automatically when input receiver is disabled).
DDR Electrical Power Gating (EPG)
The DDR I/O of the processor supports Electrical Power Gating (DDR-EPG) while the
processor is at C3 or deeper power state.
4.3.2.3  
4.3.2.4  
4.3.3  
Power Management—Processor
5th Generation Intel
®
 Core
 Processor Family, Intel
®
 Core
 M Processor Family, Mobile Intel
®
 Pentium
®
 Processor Family, and
Mobile Intel
®
 Celeron
®
 Processor Family
March 2015
Datasheet – Volume 1 of 2
Order No.: 330834-004v1
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