Infineon 1024MB, 800MHz, DDR II, PC6400, CL6 HYS64T128000EU-2.5C2 User Manual
Product codes
HYS64T128000EU-2.5C2
HYS[64/72]T512020EU–[25F/2.5/3S]–A
Unbuffered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.0, 2008-06
16
06112008-YHWK-B105
TABLE 10
DRAM Component Operating Temperature Range
3.2
DC Operating Conditions
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
T
CASE
Operating Temperature
0
95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85
°C the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9
μs
4) When operating this product in the 85 °C to 95 °C T
CASE
temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
I
DD6
by approximately 50%
Parameter
Symbol
Values
Unit
Note
Min.
Typ.
Max.
Device Supply Voltage
V
DD
1.7
1.8
1.9
V
Output Supply Voltage
V
DDQ
1.7
1.8
1.9
V
1)
1) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
Input Reference Voltage
V
REF
0.49
×
V
DDQ
0.5
×
V
DDQ
0.51
×
V
DDQ
V
2)
2) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF
(DC).
V
REF
is also expected to track noise in
V
DDQ
.
SPD Supply Voltage
V
DDSPD
1.7
—
3.6
V
DC Input Logic High
V
IH(DC)
V
REF
+ 0.125
—
V
DDQ
+ 0.3
V
DC Input Logic Low
V
IL (DC
)
– 0.30
—
V
REF
– 0.125
V
In / Output Leakage Current
I
L
– 5
—
5
μA
3)
3) Input voltage for any connector pin under test of 0 V
≤
V
IN
≤
V
DDQ
+ 0.3 V; all other pins at 0 V. Current is per pin