Infineon 1024MB, 800MHz, DDR II, PC6400, CL6 HYS64T128000EU-2.5C2 User Manual

Product codes
HYS64T128000EU-2.5C2
Page of 41
HYS[64/72]T512020EU–[25F/2.5/3S]–A
Unbuffered DDR2 SDRAM Modules
 Internet Data Sheet
Rev. 1.0, 2008-06
3
06112008-YHWK-B105
1
 
Overview
This chapter gives an overview of the 240-pin Unbuffered DDR2 SDRAM modules product family  and describes its main
characteristics.
1.1
Features
• 240-Pin PC2-6400 and PC2-5300  DDR2 SDRAM memory 
modules.
• Two ranks 512M
× 64, 512M × 72 module organization, 
and 256M
× 8 chip organization.
• 4GB Modules built with 2 Gbit DDR2 SDRAMs in chipsize 
packages PG-TFBGA-68.
• Standard Double-Data-Rate-Two Synchronous DRAMs 
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power 
supply.
• All speed grades faster than DDR2-400 comply with 
DDR2-400 timing specifications.
• Programmable CAS Latencies (3, 4, 5, 6 and 7 ), Burst 
Length (8 & 4).
• Auto Refresh (CBR) and Self Refresh.
• Auto Refresh for temperatures above 85 °C 
t
REFI
 = 3.9 
μs.
• Programmable self refresh rate via EMRS2 setting.
• Programmable partial array refresh via EMRS2 settings.
• DCC enabling via EMRS2 setting.
• All inputs and outputs SSTL_1.8 compatible.
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die 
Termination (ODT).
• Serial Presence Detect with E
2
PROM.
• UDIMM and EDIMM Dimensions (nominal): 30 mm high, 
133.35 mm wide
• Based on standard reference layouts Raw Cards 'E' and 
'G'.
• RoHS compliant products
1)
.
TABLE 1
Performance Table
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined 
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, 
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. For more information please visit 
www.qimonda.com/green_products
 .
QAG Speed Code
–25F
–2.5
–3S
Unit
Note
DRAM Speed Grade
DDR2
–800D 
–800E 
–667D 
t
CK
Module Speed Grade
PC2
–6400D
–6400E
–5300D
CAS-RCD-RP latencies
5–5–5
6–6–6
5–5–5
Max. Clock Frequency
CL3
f
CK3
200
200
200
MHz
CL4
f
CK4
266
266
266
MHz
CL5
f
CK5
400
333
333
MHz
CL6
f
CK6
400
MHz
Min. RAS-CAS-Delay
t
RCD
12.5
15
15
ns
Min. Row Precharge Time
t
RP
12.5
15
15
ns
Min. Row Active Time 
t
RAS
45
45
45
ns
Min. Row Cycle Time 
t
RC
57.5
60
60
ns
Precharge-All (8 banks) command period
t
PREA
15
17.5
18
ns
1)2)