Kingston Technology Memory HyperX 512MB 750MHz DDR2 CL4 KHX6000D2/512 Leaflet

Product codes
KHX6000D2/512
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Memory Module Specification
Document No. 4804187-001.A00
03/25/05
KHX6000D2/512
512MB 64M x 64-Bit PC2-6000
CL4 240-Pin DIMM
KEYED
Page 1
DESCRIPTION:
This document describes Kingston's 64M x 64-bit (512MB) DDR2-750 CL4 SDRAM (Synchronous
DRAM) memory module, based on sixteen 32M x 8-bit DDR2 FBGA components. This module has
been tested to run at DDR2 750MHz at low latency timing of 4-4-4-12 at 1.90V. The SPD is
programmed to JEDEC standard latency timing of 4-4-4-12 at 1.8V. This 240-pin DIMM uses gold
contact fingers and requires +1.8V. The electrical and mechanical specifications are as follows:
FEATURES:
Power supply :   Vdd:  1.8V ± 0.1V, Vddq:  1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency  4 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 4-4-4-12 at +1.8V / 4-4-4-12 at +1.9V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), double  sided  component
PERFORMANCE:
Clock Cycle Time (tCK) CL=4
3.75ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
60ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
105ns
Row Active Time (tRAS)
45ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
2.916 W (operating)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 55
o
 C
Storage Temperature
-55
o
 C to +125
o
 C
T E C H N O L O G Y