Kingston Technology Memory HyperX 512MB 750MHz DDR2 CL4 2pk KHX6000D2K2/512 Leaflet

Product codes
KHX6000D2K2/512
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Memory Module Specification
Document No. 4804189-001.A00
03/25/05
KHX6000D2K2/512
512MB (256MB 32M x 64-Bit x 2 pcs.)
PC2-6000 CL4 240-Pin DIMM Kit
KEYED
Page 1
DESCRIPTION:
Kingston's KHX6000D2K2/512 is a kit of two 32M x 64-bit (256MB) DDR2-750 CL4 SDRAM
(Synchronous DRAM) memory modules, based on eight 32M x 8-bit DDR2 FBGA components per
module. Total kit capacity is 512MB. Each pair has been tested to run at DDR2 750MHz at low
latency timing of 4-4-4-12 at 1.90V. The SPD is programmed to JEDEC standard latency timing of
4-4-4-12 at 1.8V. Each 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical
and mechanical specifications are as follows:
FEATURES:
Power supply :   Vdd:  1.8V ± 0.1V, Vddq:  1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency  4 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 4-4-4-12 at +1.8V / 4-4-4-12 at +1.9V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), single  sided  component
PERFORMANCE:
Clock Cycle Time (tCK) CL=4
3.75ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
60ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
105ns
Row Active Time (tRAS)
45ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
1.512 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 55
o
 C
Storage Temperature
-55
o
 C to +125
o
 C
T E C H N O L O G Y