National CP3BT26 User Manual

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246

t

START

Program/Erase to NVSTR Setup Time

a

(NVSTR = Non-Volatile Storage

a.  Program/erase to NVSTR Setup Time is determined by the following equation:

t

START

 = T

clk

 × (FTDIV + 1) × (FTSTART + 1), where T

clk

 is the System Clock period, FTDIV is the contents of 

the FMPSR or FSMPSR register, and FTSTART is the contents of the FMSTART or FSMSTART register

5

-

µs

t

TRAN

NVSTR to Program Setup Time

b

b.  NVSTR to Program Setup Time is determined by the following equation:

t

TRAN

 = T

clk

 × (FTDIV + 1) × (FTTRAN + 1), where T

clk

 is the System Clock period, FTDIV is the contents of 

the FMPSR or FSMPSR register, and FTTRAN is the contents of the FMTRAN or FSMTRAN register

10

-

µs

t

PROG

Programming Pulse Width

c

c.  Programming Pulse Width is determined by the following equation:

t

PROG

 = T

clk

 × (FTDIV + 1) × 8 × (FTPROG + 1), where T

clk

 is the System Clock period, FTDIV is the con-

tents of the FMPSR or FSMPSR register, and FTPROG is the contents of the FMPROG or FSMPROG regis-
ter

20

40

µs

t

PERASE

Page Erase Pulse Width

d

d.  Page Erase Pulse Width is determined by the following equation:

t

PERASE

 = T

clk

 × (FTDIV + 1) × 4096 × (FTPER + 1), where T

clk

 is the System Clock period, FTDIV is the 

contents of the FMPSR or FSMPSR register, and FTPER is the contents of the FMPERASE or FSMPER-
ASE register

20

-

ms

t

MERASE

Module Erase Pulse Width

e

e.  Module Erase Pulse Width is determined by the following equation:

t

MERASE

 = T

clk

 × (FTDIV + 1) × 4096 × (FTMER + 1), where T

clk

 is the System Clock period, FTDIV is the 

contents of the FMPSR or FSMPSR register, and FTMER is the contents of the FMMERASE0 or 
FSMMERASE0 register

200

-

ms

t

END

NVSTR Hold Time

f

f.  NVSTR Hold Time is determined by the following equation:

t

END

 = T

clk

 × (FTDIV + 1) × (FTEND + 1), where T

clk

 is the System Clock period, FTDIV is the contents of the 

FMPSR or FSMPSR register, and FTEND is the contents of the FMEND or FSMEND register

5

-

µs

t

MEND

NVSTR Hold Time (Module Erase)

g

g.  NVSTR Hold Time (Module Erase) is determined by the following equation:

t

MEND

 = T

clk

 × (FTDIV + 1) × 8 × (FTMEND + 1), where T

clk

 is the System Clock period, FTDIV is the con-

tents of the FMPSR or FSMPSR register, and FTMEND is the contents of the FMMEND or FSMMEND regis-
ter

100

-

µs

t

RCV

Recovery Time

h

h.  Recovery Time is determined by the following equation:

t

RCV

 = T

clk

 × (FTDIV + 1) × (FTRCV + 1), where T

clk

 is the System Clock period, FTDIV is the contents of the 

FMPSR or FSMPSR register, and FTRCV is the contents of the FMRCV or FSMRCV register

1

-

µs

t

HV

Cumulative Program High Voltage Period For 
Each Row After Erase

i

i.  Cumulative program high voltage period for each row after erase t

HV

 is the accumulated duration a flash cell 

is exposed to the programming voltage after the last erase cycle.

128K program blocks

-

8

ms

t

HV

8K data block

-

4

ms

Write/Erase Endurance

20,000

-

cycles

Data Retention

25

°C

100

-

years