Kingston Technology 3GB, 1333MHz, DDR3, ECC, CL9, DIMM (Kit of 3), w/ Thermal Sensor (Intel) KVR1333D3E9SK3/3GI Data Sheet
Product codes
KVR1333D3E9SK3/3GI
Memory Module Specifications
KVR1333D3E9SK3/3GI
3GB (1GB 128M x 72-Bit x 3 pcs.) PC3-10600
Triple-Channel CL9 ECC 240-Pin DIMM Kit
Triple-Channel CL9 ECC 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0819-001.A00 08/03/09 Page 1
DESCRIPTION
ValueRAM’s KVR1333D3E9SK3/3GI is a kit of three 128M x
72-bit 1GB (1024MB) DDR3-1333 CL9 SDRAM (Synchronous
DRAM), Intel
72-bit 1GB (1024MB) DDR3-1333 CL9 SDRAM (Synchronous
DRAM), Intel
®
Compatibility Tested, ECC triple-channel
memory modules, based on nine 128M x 8-bit DDR3-1333
FBGA components. Total kit capacity is 3GB (3072MB). Each
module’s SPD is programmed to JEDEC standard latency
1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses
gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
FBGA components. Total kit capacity is 3GB (3072MB). Each
module’s SPD is programmed to JEDEC standard latency
1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses
gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component
• PCB : Height 1.180” (30.00mm), single sided component
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
110ns
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power
1.215 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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