Panasonic 2SC5845 User Manual
Transistors
1
Publication date: August 2003
SJC00297AED
2SC5845
Silicon NPN epitaxial planar type
For general amplification
■ Features
• High forward current transfer ratio h
FE
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
ing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µΑ, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µΑ, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
µA
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2.2
pF
(Common base, input open circuited)
Transition frequency
f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz
100
MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Marking Symbol: 7M
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).