Panasonic 2SA1790J User Manual
Transistors
1
Publication date: July 2003
SJC00291AED
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• High transition frequency f
T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−30
V
Collector-emitter voltage (Base open)
V
CEO
−20
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−30
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
h
FE
70 to 140
110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Unit: mm
Marking Symbol: E
0.27
±0.02
3
1
2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
SSMini3-F1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
CE
= −10 V, I
C
= −1 mA
− 0.7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0
−100
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= −5 V, I
C
= 0
−10
µA
Forward current transfer ratio
*
h
FE
V
CE
=
−10 V, I
C
=
−1 mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA
− 0.1
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
V
CB
= −10 V, I
E
= 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
= −10 V, I
E
= 1 mA, f = 2 MHz
22
50
Ω
Reverse transfer capacitance (Common emitter)
C
re
V
CB
= −10 V, I
E
= 1 mA, f = 10.7 MHz
1.2
2.0
pF
This product complies with the RoHS Directive (EU 2002/95/EC).