Panasonic 2SC3935 User Manual

Transistors

1

Publication date: February 2004

SJC00145CED

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■ Features

• High transition frequency f

T

• Small collector output capacitance (Common base, input open cir-

cuited) C

ob

 and reverse transfer capacitance (Common base) C

rb

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

15

V

Collector-emitter voltage (Base open)

V

CEO

10

V

Emitter-base voltage (Collector open)

V

EBO

3

V

Collector current

I

C

50

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= 2 mA, I

B

 

=  0

10

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10 µA, I

C

 

=  0

3

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= 10 V, I

E

 

=  0

1

µA

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

= 10 V, I

B

 

=  0

10

µA

Forward current transfer ratio

h

FE1 

*1

V

CE

 

= 2.4 V, I

C

 

= 7.2 mA

75

220



h

FE2

V

CE

 

= 2.4 V, I

C

 

= 100 µA

75

h

FE

 ratio

∆h

FE 

*2

h

FE2

: V

CE

 

= 2.4 V, I

C

 

= 100 µA

0.75

1.60



h

FE1

: V

CE

 

= 2.4 V, I

C

 

= 7.2 mA

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= 20 mA, I

B

 

= 4 mA

0.5

V

Transition frequency

f

T

V

CB

 

= 4 V, I

E

 

= −7.2 mA, f = 200 MHz

1.4

1.9

2.5

GHz

Collector output capacitance

C

ob

V

CB

 

= 4 V, I

E

 

= 0, f = 1 MHz

0.9

1.1

pF

(Common base, input open circuited)

Reverse transfer capacitance

C

rb

V

CB

 

= 4 V, I

E

 

= 0, f = 1 MHz

0.25

0.35

pF

(Common base)

Collector-base parameter

r

bb

' • C

C

V

CB

 

= 4 V, I

E

 

= −5 mA, f = 31.9 MHz

11.8

13.5

ps

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Rank classification

Rank

P

Q

h

FE

75 to 130

110 to 220

2.1

±

0.1

1.3

±0.1

0.3

+0.1

–0.0

2.0

±0.2

1.25

±

0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±

0.1

0.9

±

0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

5˚

10˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

Marking Symbol: 1S

*2:

∆h

FE

 

= h

FE2

 / h

FE1

This product complies with the RoHS Directive (EU 2002/95/EC).