Cypress CY7C1460AV33 Manual De Usuario

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CY7C1460AV33
CY7C1462AV33
CY7C1464AV33
Document #: 38-05353 Rev. *D
Page 27 of 27
Document History Page
Document Title: CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM 
with NoBL™ Architecture
Document Number: 38-05353
REV.
ECN No.
Issue Date
Orig. of 
Change
Description of Change
**
254911
See ECN
SYT
New Data sheet
Part number changed from previous revision. New and old part number differ 
by the letter “A”
*A
303533
See ECN
SYT
Changed H9 pin from V
SSQ
 to V
SS
 on the Pin Configuration table for 209 
FBGA on Page # 5
Changed the test condition from V
DD
 = Min to V
DD
 = Max for V
OL
 in the 
Electrical Characteristics table
Replaced 
Θ
JA 
and 
Θ
JC 
from TBD to respective Thermal Values for All 
Packages on the Thermal Resistance Table
Changed I
DD
 from 450, 400 & 350 mA to 475, 425 & 375 mA for 250, 200 
and 167 MHz respectively
Changed I
SB1
 from 190, 180 and 170 mA to 225 mA for 250, 200 and 167 
MHz respectively
Changed I
SB2
 from 80 mA to 100 mA for all frequencies
Changed I
SB3
 from 180, 170 & 160 mA to 200 mA for 250, 200 and 167 MHz 
respectively
Changed I
SB4 
from 100 mA to 110 mA for all frequencies
Changed C
IN
, C
CLK
 and C
I/O
 to 6.5, 3 and 5.5 pF from 5, 5 and 7 pF for TQFP 
Package
Changed t
CO
 from 3.0 to 3.2 ns and t
DOH 
from 1.3 ns to 1.5 ns for 200 MHz 
Speed Bin 
Added lead-free information for 100-pin TQFP and 165 FBGA and 209 BGA 
packages
*B
331778
See ECN
SYT
Modified Address Expansion balls in the pinouts for 165 FBGA and 209 BGA 
Package as per JEDEC standards and updated the Pin Definitions accord-
ingly
Modified V
OL, 
V
OH 
test conditions
Changed C
IN
, C
CLK
 and C
I/O
 to 7, 7and 6 pF from 5, 5 and 7 pF for 165 FBGA 
Package
Added Industrial Temperature Grade
Changed I
SB2
 and I
SB4
 from 100 and 110 mA to 120 and 135 mA respectively
Updated the Ordering Information by Shading and Unshading MPNs as per 
availability
*C
417509
See ECN
RXU
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from 
“3901 North First Street” to “198 Champion Court”
Changed I
X
 current value in MODE from –5 & 30 
µA to –30 & 5 µA respec-
tively and also Changed I
X
 current value in ZZ from –30 & 5 
µA to –5 & 30 
µA respectively on page# 18
Modified test condition from V
IH
 < V
DD 
to
 
V
IH 
< V
DD
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the 
Electrical Characteristics Table
Replaced Package Name column with Package Diagram in the Ordering 
Information table
Replaced Package Diagram of 51-85050 from *A to *B
*D
473229
See ECN
NXR
Added the Maximum Rating for Supply Voltage on V
DDQ
 Relative to GND
Changed t
TH
, t
TL 
from 25 ns to 20 ns and t
TDOV
 from 5 ns to 10 ns in TAP 
AC Switching Characteristics table
Updated the Ordering Information table.