Cypress CY7C604XX Manual De Usuario

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CY7C604XX
Document Number: 001-12395 Rev *H
Page 16 of 30
Maximum Ratings 
Storage Temperature (T
STG
-55
o
C to 125
o
C (Typical +25
o
C)
Supply Voltage Relative to Vss (Vdd) ............. -0.5V to +4.0V
DC Input Voltage (V
IO
).................... Vss - 0.5V to Vdd + 0.5V
DC Voltage Applied to Tri-state (V
IOZ
)Vss - 0.5V to Vdd + 0.5V
Maximum Current into any Port Pin (I
MIO
). -25mA to +50 mA
Electro Static Discharge Voltage (ESD) 
.................. 2000V
Latch-up Current (LU) 
(7)
........................................... 200 mA
Operating Conditions
Ambient Temperature (T
A
) .................................. 0
o
C to 70
o
C
Operational Die Temperature (T
J
)
................... 0
o
C to 85
o
C
DC Electrical Characteristics
DC Chip Level Specifications
 lists guaranteed maximum and minimum specifications for the entire voltage and temperature ranges.
Notes
5. Higher storage temperatures reduce data retention time. Recommended storage temperature is +25°C ± 25°C. Extended duration storage temperatures above 85°C 
degrade reliability.
6. Human Body Model ESD.
7. According to JESD78 standard.
8. The temperature rise from ambient to junction is package specific. See 
. The user must limit the power consumption to comply with this requirement.
Table 9.  DC Chip Level Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Vdd
Supply Voltage
See table titled 
1.71
3.6
V
I
DD24
Supply Current, IMO = 24 MHz
Conditions are Vdd = 3.0V, T
A
 = 25
o
C, 
CPU = 24 MHz
No I2C/SPI
3.1
mA
I
DD12
Supply Current, IMO = 12 MHz
Conditions are Vdd = 3.0V, T
A
 = 25
o
C, 
CPU = 12 MHz
No I2C/SPI
2.0
mA
I
DD6
Supply Current, IMO = 6 MHz
Conditions are Vdd = 3.0V, T
A
 = 25
o
C, 
CPU = 6 MHz
No I2C/SPI
1.5
mA
I
SB0
Deep Sleep Current
Vdd = 3.0V, T
A
 = 25
o
C, IO regulator 
turned off
0.1
μA
I
SB1
Standby Current with POR, LVD, and 
Sleep Timer
Vdd = 3.0V, T
A
 = 25
o
C, IO regulator 
turned off
1.5
μA