Cypress CY8CNP102E Manual De Usuario

Document #: 001-43991 Rev. *D

Page 16 of 38

I

DDPV

Supply Current During Programming or Verify

–

10

30

mA

V

ILP

Input Low Voltage During Programming or Verify

–

–

0.8

V

V

IHP

Input High Voltage During Programming or Verify

2.2

–

–

V

I

ILP

Input Current when Applying Vilp to P1[0] or P1[1] 

During Programming or Verify

–

–

0.2

mA

Driving internal pull 

down resistor.

I

IHP

Input Current when Applying Vihp to P1[0] or P1[1] 

During Programming or Verify

–

–

1.5

mA

Driving internal pull 

down resistor.

V

OLV

Output Low Voltage During Programming or Verify

–

–

Vss + 0.75

V

V

OHV

Output High Voltage During Programming or Verify

Vcc

 

- 1.0

–

Vcc

V

Flash

ENPB

Flash Endurance (per block)

50,000

–

–

–

Erase/write cycles 

per block.

Flash

ENT

Flash Endurance (total)

[3]

1,800,000

–

–

–

Erase/write cycles.

Flash

DR

Flash Data Retention

10

–

–

Years

3. A maximum of 36 x 50,000 block endurance cycles is allowed. This may be balanced between operations 36x1 blocks of 50,000 maximum cycles each, 36x2 blocks 

AN2015

http//www.cypress.com

 under Application Notes for more information.