Cypress CY8CNP102E Manual De Usuario
PRELIMINARY
CY8CNP102B, CY8CNP102E
Document #: 001-43991 Rev. *D
Page 29 of 38
In the following table, t
HRECALL
starts from the time Vcc rises above V
SWITCH.
If an SRAM WRITE has not taken place since the last
nonvolatile cycle, no STORE takes place. Industrial grade devices require 15 ms maximum.
AC General Purpose IO Specifications
Table 34. 5V nvSRAM AutoStore/Power Up RECALL (CY8CNP102E)
Parameter
Description
nvSRAM
Unit
Min
Max
t
HRECALL
Power Up RECALL Duration
20
ms
t
STORE
STORE Cycle Duration
12.5
ms
V
SWITCH
Low Voltage Trigger Level
4.4
V
t
VccRISE
VCC Rise Time
150
μs
Table 35. 5V AC GPIO Specifications (CY8CNP102E)
Symbol
Description
Min
Typ
Max
Units
Notes
F
GPIO
GPIO Operating Frequency
0
–
12.3
MHz Normal Strong Mode
TRiseF
Rise Time, Normal Strong Mode, Cload = 50 pF
3
–
18
ns
Vcc = 4.75V to 5.25V
10% - 90%
TFallF
Fall Time, Normal Strong Mode, Cload = 50 pF
2
–
18
ns
Vcc = 4.75V to 5.25V
10% - 90%
Figure 7. GPIO Timing Diagram
TFallF
TFallS
TFallS
TRiseF
TRiseS
90%
10%
GPIO
Pin
Output
Voltage