Cypress CY7C1475BV33 Manual De Usuario
CY7C1471BV33
CY7C1473BV33, CY7C1475BV33
Document #: 001-15029 Rev. *B
Page 22 of 32
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
device. These user guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55
Power Applied ............................................ –55
°C to +125°C
Supply Voltage on V
DD
Relative to GND ........–0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ...... –0.5V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ...........................................–0.5V to V
in Tri-State ...........................................–0.5V to V
DDQ
+ 0.5V
DC Input Voltage ................................... –0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
(MIL-STD-883, Method 3015)
Latch Up Current .................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial
0°C to +70°C 3.3V
–5%/+10% 2.5V – 5%
to V
DD
Industrial
–40°C to +85°C
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Max
Unit
V
DD
Power Supply Voltage
3.135
3.6
V
V
DDQ
IO Supply Voltage
For 3.3V IO
3.135
V
DD
V
For 2.5V IO
2.375
2.625
V
V
OH
Output HIGH Voltage
For 3.3V IO, I
OH
= –4.0 mA
2.4
V
For 2.5V IO, I
OH
= –1.0 mA
2.0
V
V
OL
Output LOW Voltage
For 3.3V IO, I
OL
= 8.0 mA
0.4
V
For 2.5V IO, I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
For 3.3V IO
2.0
V
DD
+ 0.3V
V
For 2.5V IO
1.7
V
DD
+ 0.3V
V
V
IL
Input LOW Voltage
For 3.3V IO
–0.3
0.8
V
For 2.5V IO
–0.3
0.7
V
I
X
Input Leakage Current
except ZZ and MODE
except ZZ and MODE
GND
≤ V
I
≤ V
DDQ
–5
5
μA
Input Current of MODE
Input = V
SS
–30
μA
Input = V
DD
5
μA
Input Current of ZZ
Input = V
SS
–5
μA
Input = V
DD
30
μA
I
OZ
Output Leakage Current
GND
≤ V
I
≤ V
DD,
Output Disabled
–5
5
μA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5 ns cycle, 133 MHz
305
mA
10 ns cycle, 117 MHz
275
mA
I
SB1
Automatic CE
Power Down
Current—TTL Inputs
Power Down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
f = f
MAX
, inputs switching
7.5 ns cycle, 133 MHz
200
mA
10 ns cycle, 117 MHz
200
mA
I
SB2
Automatic CE
Power Down
Current—CMOS Inputs
Power Down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DD
– 0.3V,
f = 0, inputs static
All speeds
120
mA
I
SB3
Automatic CE
Power Down
Current—CMOS Inputs
Power Down
Current—CMOS Inputs
V
DD
= Max, Device Deselected, or
V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
, inputs switching
7.5 ns cycle, 133 MHz
200
mA
10 ns cycle, 117 MHz
200
mA
I
SB4
Automatic CE
Power Down
Current—TTL Inputs
Power Down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥ V
DD
– 0.3V or V
IN
≤
0.3V
,
f = 0, inputs static
All Speeds
165
mA
Notes
13. Overshoot: V
IH
(AC) < V
DD
+1.5V (pulse width less than t
CYC
/2). Undershoot: V
IL
(AC) > –2V (pulse width less than t
CYC
/2).
14. T
Power-up
: assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
15. The operation current is calculated with 50% read cycle and 50% write cycle.