Cypress CY8C24423A Manual De Usuario
CY8C24223A, CY8C24423A
Document Number: 3-12029 Rev. *E
Page 16 of 31
DC Electrical Characteristics
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C
and -40°C
≤ T
A
≤ 125°C. Typical parameters apply to 5V at 25°C and are for design guidance only.
DC General Purpose IO Specifications
The following tables list guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C
and -40°C
≤ T
A
≤ 125°C. Typical parameters apply to 5V at 25°C and are for design guidance.
Table 11. DC Chip-Level Specifications
Symbol
Description
Min
Typ
Max
Units
Notes
Vdd
Supply Voltage
4.75
–
5.25
V
I
DD
Supply Current
–
5
8
mA
Conditions are Vdd = 5.25V, -40
o
C
≤ T
A
≤ 125
o
C, CPU = 3 MHz, SYSCLK
doubler disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off.
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off.
I
SB
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT.
Timer, and WDT.
a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
–
4
13
μA
Conditions are with internal slow speed
oscillator, Vdd = 5.25V, -40
oscillator, Vdd = 5.25V, -40
o
C
≤ T
A
≤
55
o
C. Analog power = off.
I
SBH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT at high temperature.
Timer, and WDT at high temperature.
a
–
4
100
μA
Conditions are with internal slow speed
oscillator, Vdd = 5.25V, 55
oscillator, Vdd = 5.25V, 55
o
C < T
A
≤
125
o
C. Analog power = off.
I
SBXTL
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal.
Timer, WDT, and external crystal.
a
–
6
15
μA
Conditions are with properly loaded, 1
μW max, 32.768 kHz crystal.
Vdd = 5.25V, -40
Vdd = 5.25V, -40
o
C
≤ T
A
≤ 55
o
C.
Analog power = off.
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal at high temper-
ature.
Timer, WDT, and external crystal at high temper-
ature.
a
–
6
100
μA
Conditions are with properly loaded,
1
1
μW max, 32.768 kHz crystal.
Vdd = 5.25V, 55
o
C < T
A
≤ 125
o
C.
Analog power = off.
V
REF
Reference Voltage (Bandgap)
1.25
1.3
1.35
V
Trimmed for appropriate Vdd.
Table 12. DC GPIO Specifications
Symbol
Description
Min
Typ
Max
Units
Notes
R
PU
Pull up Resistor
4
5.6
8
k
Ω
R
PD
Pull down Resistor
4
5.6
8
k
Ω
V
OH
High Output Level
3.5
–
–
V
IOH = 10 mA, Vdd = 4.75 to 5.25V (8 total
loads, 4 on even port pins (for example,
P0[2], P1[4]), 4 on odd port pins (for
example, P0[3], P1[5])).
loads, 4 on even port pins (for example,
P0[2], P1[4]), 4 on odd port pins (for
example, P0[3], P1[5])).
V
OL
Low Output Level
–
–
0.75
V
IOL = 25 mA, Vdd = 4.75 to 5.25V (8 total
loads, 4 on even port pins (for example,
P0[2], P1[4]), 4 on odd port pins (for
example, P0[3], P1[5])). Total IOL budget
of 150 mA.
loads, 4 on even port pins (for example,
P0[2], P1[4]), 4 on odd port pins (for
example, P0[3], P1[5])). Total IOL budget
of 150 mA.
V
IL
Input Low Level
–
–
0.8
V
Vdd = 4.75 to 5.25
V
IH
Input High Level
2.2
–
V
Vdd = 4.75 to 5.25
V
H
Input Hysterisis
–
60
–
mV
I
IL
Input Leakage (Absolute Value)
–
1
–
nA
Gross tested to 1
μA
C
IN
Capacitive Load on Pins as Input
–
3.5
10
pF
Package and pin dependent.
Temp = 25
Temp = 25
o
C
C
OUT
Capacitive Load on Pins as Output
–
3.5
10
pF
Package and pin dependent.
Temp = 25
Temp = 25
o
C