Cypress CY8C20x46 Manual De Usuario

Document Number: 001-12696  Rev. *D

Page 17 of 34

Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. 

The following table lists guaranteed maximum and minimum specifications for the entire voltage and temperature ranges.

T

STG

Storage Temperature 

Higher storage temperatures reduces data 
retention time. Recommended Storage 
Temperature is +25°C ± 25°C. Extended 
duration storage temperatures above 85

o

C 

degrades reliability.

–55

+25

+125

°C

Vdd

Supply Voltage Relative to Vss

–0.5

–

+6.0

V

V

IO

DC Input Voltage

Vss – 0.5

–

Vdd + 0.5

V

V

IOZ

DC Voltage Applied to Tri-state

Vss –0.5

–

Vdd + 0.5

V

I

MIO

Maximum Current into any Port Pin

–25

–

+50

mA

ESD

Electro Static Discharge Voltage

Human Body Model ESD

2000

–

–

V

LU

Latch up Current

In accordance with JESD78 standard

–

–

200

mA

T

A

Ambient Temperature

–40

–

+85

°C

T

J

Operational Die Temperature

The temperature rise from ambient to junction 
is package specific. Refer the table 

. The 

user must limit the power consumption to 
comply with this requirement.

–40

–

+100

°C

Vdd

Supply Voltage

Refer the table 

1.71

–

5.5

V

I

DD24

Supply Current, IMO = 24 MHz

Conditions are Vdd = 3.0V, T

A

 = 25°C, 

CPU = 24 MHz. CapSense running at 12 
MHz, no IO sourcing current

–

2.88

4.0

mA

I

DD12

Supply Current, IMO = 12 MHz

Conditions are Vdd = 3.0V, T

A

 = 25°C, 

CPU = 12 MHz. CapSense running at 12 
MHz, no IO sourcing current

–

1.71

2.6

mA

I

DD6

Supply Current, IMO = 6 MHz

Conditions are Vdd = 3.0V, T

A

 = 25°C, 

CPU = 6 MHz. CapSense running at 6 MHz, 
no IO sourcing current

–

1.16

1.8

mA

I

SB0

Deep Sleep Current

Vdd = 3.0V, T

A

 = 25°C, IO regulator turned off

–

0.1

–

μA

I

SB1

Standby Current with POR, LVD and 
Sleep Timer

Vdd = 3.0V, T

A

 = 25°C, IO regulator turned off

–

1.07

1.5

μA