Cypress CY62167EV18 Manual De Usuario
CY62167EV18 MoBL
®
Document #: 38-05447 Rev. *G
Page 4 of 13
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
VFBGA
(6 x 7 x 1mm)
VFBGA
(6 x 8 x 1mm)
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
27.74
55
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
9.84
16
°C/W
Figure 2. AC Test Loads and Waveforms
Parameters
1.8V
Unit
R1
13500
Ω
R2
10800
Ω
R
TH
6000
Ω
V
TH
0.80
V
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
1.0
V
I
CCDR
Data Retention Current
V
CC
= 1.0V, CE
1
> V
CC
– 0.2V, CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
10
μA
t
CDR
Chip Deselect to Data
Retention Time
0
ns
t
R
Operation Recovery Time
t
RC
ns
Figure 3. Data Retention Waveform
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device operation requires linear V
11. Full device operation requires linear V
CC
ramp from V
DR
to V
CC
(min) > 100
μs or stable at V
CC
(min) > 100
μs.
12. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
V
CC
(min)
V
CC
(min)
t
CDR
V
DR
> 1.0 V
DATA RETENTION MODE
t
R
CE
1
or
V
CC
BHE
.
BLE
CE
2
or