Cypress CY7C1019D Manual De Usuario

Document #: 38-05464 Rev. *E

Page 3 of 11

Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.

Storage Temperature  ................................. –65°C to +150°C

Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V

CC

 to Relative GND 

[2]

... –0.5V to +6.0V

DC Voltage Applied to Outputs
in High-Z State 

[2]

...................................–0.5V to V

CC

 + 0.5V

DC Input Voltage 

[2]

................................–0.5V to V

CC

 + 0.5V

Current into Outputs (LOW) ........................................ 20 mA

Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)

Latch-up Current .................................................... > 200 mA

Industrial

–40°C to +85°C 

5V 

± 0.5V

10 ns

(Over the Operating Range)

V

OH

Output HIGH Voltage

I

OH

 = –4.0 mA

2.4

V

V

OL

Output LOW Voltage

I

OL

 = 8.0 mA

0.4

V

V

IH

Input HIGH Voltage

2.2

V

CC 

+ 0.5

V

V

IL

Input LOW Voltage 

[2]

–0.5

0.8

V

I

IX

Input Leakage Current

GND < V

I

 < V

CC

–1

+1

µA

I

OZ

Output Leakage Current

GND < V

I 

< V

CC

, Output Disabled

–1

+1

µA

I

CC

V

CC

 Operating Supply Current

V

CC

 = Max,

 

I

OUT

 = 0 mA,

f = f

max

 = 1/t

RC

100 MHz

80

mA

83 MHz

72

mA

66 MHz

58

mA

40 MHz

37

mA

I

SB1

Automatic CE Power-Down 
Current—TTL Inputs

Max V

CC

, CE > V

IH

V

IN

 > V

IH

 or V

IN

 < V

IL

, f = f

max

10

mA

I

SB2

Automatic CE Power-Down 
Current—CMOS Inputs

Max V

CC

, CE > V

CC

 – 0.3V,

V

IN

 > V

CC

 – 0.3V, or V

IN

 < 0.3V, f = 0

3

mA

2. V

IL

 (min) = –2.0V and V

IH

(max) = V

CC

 + 1V for pulse durations of less than 5 ns.