Cypress CY7C1441AV33 Manual De Usuario
CY7C1441AV33
CY7C1443AV33,CY7C1447AV33
Document #: 38-05357 Rev. *G
Page 19 of 31
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
device. User guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55
Power Applied ............................................ –55
°C to +125°C
Supply Voltage on V
DD
Relative to GND ........–0.3V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ...... –0.3V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ...........................................–0.5V to V
in Tri-State ...........................................–0.5V to V
DDQ
+ 0.5V
DC Input Voltage ................................... –0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial
0°C to +70°C
3.3V
–5%/+10%
2.5V –5%
to V
DD
Industrial
–40°C to +85°C
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
V
DD
Power Supply Voltage
3.135
3.6
V
V
DDQ
IO Supply Voltage
for 3.3V IO
3.135
V
DD
V
for 2.5V IO
2.375
2.625
V
V
OH
Output HIGH Voltage
for 3.3V IO, I
OH
= –4.0 mA
2.4
V
for 2.5V IO, I
OH
= –1.0 mA
2.0
V
V
OL
Output LOW Voltage
for 3.3V IO, I
OL
= 8.0 mA
0.4
V
for 2.5V IO, I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
for 3.3V IO
2.0
V
DD
+ 0.3V
V
for 2.5V IO
1.7
V
DD
+ 0.3V
V
V
IL
Input LOW Voltage
for 3.3V IO
–0.3
0.8
V
for 2.5V IO
–0.3
0.7
V
I
X
Input Leakage Current
except ZZ and MODE
except ZZ and MODE
GND
≤ V
I
≤ V
DDQ
–5
5
μA
Input Current of MODE
Input = V
SS
–30
μA
Input = V
DD
5
μA
Input Current of ZZ
Input = V
SS
–5
μA
Input = V
DD
30
μA
I
OZ
Output Leakage Current
GND
≤ V
I
≤ V
DDQ,
Output Disabled
–5
5
μA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz
310
mA
10-ns cycle, 100 MHz
290
mA
I
SB1
Automatic CE
Power down
Current—TTL Inputs
Power down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = f
MAX,
inputs switching
All Speeds
180
mA
I
SB2
Automatic CE
Power down
Current—CMOS Inputs
Power down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DD
– 0.3V or V
IN
≤ 0.3V,
f = 0, inputs static
All speeds
120
mA
I
SB3
Automatic CE
Power down
Current—CMOS Inputs
Power down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DDQ
– 0.3V or V
IN
≤ 0.3V,
f = f
MAX
, inputs switching
All Speeds
180
mA
I
SB4
Automatic CE
Power down
Current—TTL Inputs
Power down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DD
– 0.3V or V
IN
≤ 0.3V,
f = 0, inputs static
All Speeds
135
mA
Notes
15. Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC) > –2V (Pulse width less than t
CYC
/2).
16. T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD.