Cypress CY14B108L Manual De Usuario
PRELIMINARY
CY14B108L, CY14B108N
Document #: 001-45523 Rev. *B
Page 13 of 24
AutoStore/Power Up RECALL
Parameters
Description
20 ns
25 ns
45 ns
Unit
Min
Max
Min
Max
Min
Max
t
HRECALL
Power Up RECALL Duration
20
20
20
ms
t
STORE
STORE Cycle Duration
8
8
8
ms
t
DELAY
Time Allowed to Complete SRAM Cycle
20
25
25
ns
V
SWITCH
Low Voltage Trigger Level
2.65
2.65
2.65
V
t
VCCRISE
VCC Rise Time
150
150
150
μs
V
HDIS
HSB Output Driver Disable Voltage
1.9
1.9
1.9
V
t
LZHSB
HSB To Output Active Time
5
5
5
μs
t
HHHD
HSB High Active Time
500
500
500
ns
Switching Waveforms
Figure 10. AutoStore or Power Up RECALL
V
SWITCH
V
HDIS
V
VCCRISE
t
STORE
t
STORE
t
HHHD
t
HHHD
t
DELAY
t
DELAY
t
LZHSB
t
LZHSB
t
HRECALL
t
HRECALL
HSB OUT
Autostore
POWER-
UP
RECALL
Read & Write
Inhibited
(
RWI
)
POWER-UP
RECALL
Read & Write
BROWN
OUT
Autostore
POWER-UP
RECALL
Read & Write
POWER
DOWN
Autostore
Note
18
Note
18
Note
21
Notes
17. t
HRECALL
starts from the time V
CC
rises above V
SWITCH.
18. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.
19. On a Hardware STORE, Software STORE / RECALL, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be enabled for time t
19. On a Hardware STORE, Software STORE / RECALL, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be enabled for time t
DELAY
.
20. Read and Write cycles are ignored during STORE, RECALL, and while V
CC
is below V
SWITCH.
21. HSB pin is driven HIGH to V
CC
only by internal 100kOhm resistor, HSB driver is disabled.