Cypress CY7C1418AV18 Manual De Usuario
CY7C1416AV18, CY7C1427AV18
CY7C1418AV18, CY7C1420AV18
CY7C1418AV18, CY7C1420AV18
Document Number: 38-05616 Rev. *F
Page 30 of 31
Document History Page
Document Title: CY7C1416AV18, CY7C1427AV18, CY7C1418AV18, CY7C1420AV18, 36-Mbit DDR-II SRAM 2-Word Burst
Architecture
Document Number: 38-05616
Architecture
Document Number: 38-05616
Rev.
ECN
Oirg. Of
Change
Change
Submission Date Description Of Change
**
247331
SYT
08/26/04
New Data Sheet
*A
326519
SYT
04/14/05
Removed CY7C1420AV18 from the title
Included 300 MHz Speed grade
Replaced TBDs with their respective values for I
Included 300 MHz Speed grade
Replaced TBDs with their respective values for I
DD
and I
SB1
Added Industrial temperature grade
Replaced the TBDs on the Thermal Characteristics Table to
Replaced the TBDs on the Thermal Characteristics Table to
Θ
JA
= 17.2
°C/W
and
Θ
JC
= 3.2
°C/W
Replaced TBDs in the Capacitance Table to their respective values for the
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 18
Added lead-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 18
Added lead-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
*B
413953
NXR
12/22/05
Converted from preliminary to final
Added CY7C1427AV18 part number to title
Added 278-MHz speed Bin
Changed C, C Description in Feature Section and Pin Description
Added CY7C1427AV18 part number to title
Added 278-MHz speed Bin
Changed C, C Description in Feature Section and Pin Description
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Added Power-up sequence and Wave form on page# 19
Added Footnotes# 13, 14, 15 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
“3901 North First Street” to “198 Champion Court”
Added Power-up sequence and Wave form on page# 19
Added Footnotes# 13, 14, 15 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage
Current on page# 20
Modified the I
Modified the I
DD
and I
SB
values
Modified test condition in Footnote #17 on page# 20 from V
DDQ
< V
DD
to
V
DDQ
< V
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table
Information table.
Updated Ordering Information Table
*C
468029
NXR
07/10/06
Modified the ZQ Definition from Alternately, this pin can be connected
directly to V
directly to V
DD
to Alternately, this pin can be connected directly to V
DDQ
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
,
t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP
AC Switching Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
*D
505682
VKN
12/19/06
Corrected typo in the Functional Description section for burst counter logic