Cypress CY14B102N Manual De Usuario

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ADVANCE
CY14E108L, CY14E108N
Document Number: 001-45524 Rev. *A 
Page 10 of 20
AutoStore and Power Up RECALL
Parameters
Description
CY14E108L/CY14E108N
Unit
Min
Max
t
HRECALL 
Power Up RECALL Duration
20
ms
t
STORE 
STORE Cycle Duration
15
ms
V
SWITCH
Low Voltage Trigger Level
4.4
V
t
VCCRISE
VCC Rise Time
150
μs
Software Controlled STORE and RECALL Cycle
In the following table, the software controlled STORE/RECALL cycle parameters are listed.
Parameters
Description
20ns
25ns
45ns
Unit
Min
Max
Min
Max
Min
Max
t
RC
STORE/RECALL Initiation Cycle Time
20
25
45
ns
t
AS
Address Setup Time
0
0
0
ns
t
CW
Clock Pulse Width
15
20
30
ns
t
GHAX
Address Hold Time
1
1
1
ns
t
RECALL
RECALL Duration
200
200
200
μs
t
SS 
Soft Sequence Processing Time
70
70
70
μs
Hardware STORE Cycle
Parameters
Description
CY14E108L/CY14E108N
Unit
Min
Max
t
DELAY 
Time allowed to complete SRAM cycle
1
70
μs
t
HLHX
Hardware STORE pulse width
15
ns
Switching Waveforms 
Figure 5.  SRAM Read Cycle #1: Address Controlled
 
 
t
RC
t
AA
t
OHA
ADDRESS
DQ (DATA OUT)
DATA VALID
Notes
14. t
HRECALL 
starts from the time V
CC
 rises above V
SWITCH.
15. If an SRAM Write has not taken place since the last nonvolatile cycle, no STORE takes place.
16. The software sequence is clocked with CE controlled or OE controlled reads.
17. The six consecutive addresses must be read in the order listed in the mode selection table. WE must be HIGH during all six consecutive cycles.
18. This is the amount of time it takes to take action on a soft sequence command.Vcc power must remain HIGH to effectively register command.
19. Commands such as STORE and RECALL lock out IO until operation is complete which further increases this time. See the specific command
 
20. On a hardware STORE initiation, SRAM operation continues to be enabled for time t
DELAY
 to allow read and write cycles to complete.
21. HSB must remain HIGH during READ and WRITE cycles.