Cypress CY14E256L Manual De Usuario
CY14E256L
Document Number: 001-06968 Rev. *F
Page 8 of 18
V
OL
Output LOW Voltage
I
OUT
= 8 mA
0.4
V
V
BL
Logic ‘0’ Voltage on HSB
Output
Output
I
OUT
= 3 mA
0.4
V
V
CAP
Storage Capacitor
Between V
CAP
pin and Vss, 6V rated. 68 µF +20% nom.
54
260
uF
Data Retention and Endurance
Parameter
Description
Min
Unit
DATA
R
Data Retention
100
Years
NV
C
Nonvolatile STORE Operations
1,000
K
Capacitance
In the following table, the capacitance parameters are listed.
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25
°C, f = 1 MHz,
V
CC
= 0 to 3.0V
5
pF
C
OUT
Output Capacitance
7
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
Parameter
Description
Test Conditions
32-SOIC
32-CDIP
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
(Junction to Ambient)
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
and procedures for measuring thermal
impedance, per EIA / JESD51.
35.45
TBD
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
(Junction to Case)
13.26
TBD
°C/W
Figure 6. AC Test Loads
AC Test Conditions
DC Electrical Characteristics
Over the operating range (continued)(V
CC
= 4.5V to 5.5V)
[6]
Parameter
Description
Test Conditions
Min
Max
Unit
5.0V
Output
30 pF
R1 963
Ω
R2
512
Ω
5.0V
Output
5 pF
R1 963
Ω
R2
512
Ω
For Tri-state Specs
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
8. These parameters are guaranteed by design and are not tested.