Cypress CY7C1393BV18 Manual De Usuario
CY7C1392BV18, CY7C1992BV18
CY7C1393BV18, CY7C1394BV18
CY7C1393BV18, CY7C1394BV18
Document #: 38-05623 Rev. *D
Page 30 of 31
Document History Page
Document Title: CY7C1392BV18/CY7C1992BV18/CY7C1393BV18/CY7C1394BV18, 18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Document Number: 38-05623
Burst Architecture
Document Number: 38-05623
Rev.
ECN No.
Submission
Date
Orig, of
Change
Description of Change
**
252474
See ECN
SYT
New data sheet
*A
325581
See ECN
SYT
Removed CY7C1394BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
DD
and I
SB1
specs
Replaced the TBDs on the Thermal Characteristics Table to
Θ
JA
= 28.51
°C/W and Θ
JC
= 5.91
°C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
*B
413997
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1992BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 18
Replaced Three-state with Tri-state
Changed the description of I
Added CY7C1992BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 18
Replaced Three-state with Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage Current on
page# 19
Modified the I
Modified the I
DD
and I
SB
values
Modified test condition in Footnote #18 on page# 19 from V
DDQ
< V
DD
to
V
DDQ
< V
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information
Information table
Updated the Ordering Information
*C
472384
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly to V
DD
to Alternately, this pin can be connected directly to V
DDQ
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP AC Switching
Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C
to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C
to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table