Cypress CY62128EV30 Manual De Usuario
CY62128EV30
Document #: 38-05579 Rev. *D
Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential..........................................–0.3V to V
Potential..........................................–0.3V to V
CC(max)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
.........................–0.3V to V
CC(max)
+ 0.3V
DC Input Voltage
.......................–0.3V to V
CC(max)
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
CY62128EV30LL
Ind’l/Auto-A
–40°C to +85°C
2.2V to
3.6V
Auto-E
–40°C to +125°C
Electrical Characteristics
(Over the Operating Range)
Parameter
Description
Test Conditions
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Unit
Min
Typ
Max
Min
Typ
Max
V
OH
Output HIGH Voltage
I
OH
= –0.1 mA
2.0
2.0
V
I
OH
= –1.0 mA, V
CC
> 2.70V
2.4
2.4
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
0.4
0.4
V
I
OL
= 2.1 mA, V
CC
> 2.70V
0.4
0.4
V
V
IH
Input HIGH Voltage
V
CC
= 2.2V to 2.7V
1.8
V
CC
+
0.3V
1.8
V
CC
+
0.3V
V
V
CC
= 2.7V to 3.6V
2.2
V
CC
+
0.3V
2.2
V
CC
+
0.3V
V
V
IL
Input LOW Voltage
V
CC
= 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
V
CC
= 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
–4
+4
μA
I
OZ
Output Leakage Current
GND < V
O
< V
CC
, Output Disabled
–1
+1
–4
+4
μA
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
11
16
11
35
mA
f = 1 MHz
1.3
2.0
1.3
4.0
mA
I
SB1
Automatic CE
Power down
Current — CMOS Inputs
Power down
Current — CMOS Inputs
CE
1
> V
CC
−0.2V, CE
2
< 0.2V
V
IN
> V
CC
–0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE and WE), V
CC
= 3.60V
1
4
1
35
μA
I
SB2
Automatic CE
Power down
Current — CMOS Inputs
Power down
Current — CMOS Inputs
CE
1
> V
CC
– 0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1
4
1
30
μA
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
μs ramp time from 0 to V
CC
(min) and 200
μs wait time after V
CC
stabilization.
7. Only chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.