Panasonic MA36132E Manual De Usuario
Switching Diodes
Publication date: September 2006
SKF00069AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA36132E
Silicon epitaxial planar type
For high speed switching circuits
Features
Two elements are contained in one package, optimum for high-density
mounting
Short reverse recovery time t
rr
Small terminal capacitance C
t
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
I
F
150
mA
100
*2
Forward current (Average)
I
FM
340
mA
225
*2
Non-repetitive peak forward surge current
*1
I
FSM
750
mA
500
*2
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *1: t = 1 s
*2: Value for single diode
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward current
V
F
I
F
= 100 mA
1.2
V
Reverse voltage
V
R
I
R
= 100 mA
80
V
Reverse current
I
R
V
R
= 75 V
100
nA
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V, I
rr
= 0.1 I
R
,
R
L
= 100 W
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ =
0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Marking Symbol: A2
Internal Connection
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 1, 2
ML3-N2 Package
0.60
±0.0
5
1.00
±
0.05
2
1
3
0.39
+0.01
−
0.03
0.25
±
0.05
0.25
±
0.05
0.5
0
±0.0
5
0.65
±
0.01
0.15
±0.05
2
1
0.35
±0.01
0.05
±
0.03
0.01
±
0.005
0.0
5
±0.03
3
1
2
3