Cypress CY62147DV30 Manual De Usuario
CY62147DV30
Document #: 38-05340 Rev. *F
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ......................................–0.3V to + V
Potential ......................................–0.3V to + V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
[6,7]
..........................–0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
[6,7]
..................... –0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Device
Range
Ambient
Temperature
[T
A
]
[9]
V
CC
CY62147DV30L
Automotive-E –40°C to +125°C
2.20V
to
3.60V
CY62147DV30LL
Industrial
–40°C to +85°C
Automotive-A –40°C to +85°C
Electrical Characteristics
(Over the Operating Range)
Parameter Description
Test Conditions
–45
–55/–70
Unit
Min.
Typ.
[5]
Max.
Min.
Typ.
[5]
Max.
V
OH
Output HIGH
Voltage
Voltage
I
OH
= –0.1 mA
V
CC
= 2.20V
2.0
2.0
V
I
OH
= –1.0 mA
V
CC
= 2.70V
2.4
2.4
V
V
OL
Output LOW
Voltage
Voltage
I
OL
= 0.1 mA
V
CC
= 2.20V
0.4
0.4
V
I
OL
= 2.1 mA
V
CC
= 2.70V
0.4
0.4
V
V
IH
Input HIGH
Voltage
Voltage
V
CC
= 2.2V to 2.7V
1.8
V
CC
+ 0.3V
1.8
V
CC
+ 0.3V
V
V
CC
= 2.7V to 3.6V
2.2
V
CC
+ 0.3V
2.2
V
CC
+ 0.3V
V
V
IL
Input LOW
Voltage
Voltage
V
CC
= 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
V
CC
= 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
V
I
IX
Input Leakage
Current
Current
GND < V
I
< V
CC
Ind’l
–1
+1
–1
+1
µA
Auto-A
[9]
–1
+1
µA
Auto-E
[9]
–4
+4
µA
I
OZ
Output
Leakage
Current
Leakage
Current
GND < V
O
< V
CC
,
Output Disabled
Ind’l
–1
+1
–1
+1
µA
Auto-A
[9]
–1
+1
µA
Auto-E
[9]
–4
+4
µA
I
CC
V
CC
Operating
Supply
Current
Current
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
10
20
8
15
mA
f = 1 MHz
1.5
3
1.5
3
mA
I
SB1
Automatic CE
Power-Down
Current —
CMOS Inputs
Power-Down
Current —
CMOS Inputs
CE > V
CC
−0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and
Data Only),
f = 0 (OE, WE, BHE and
BLE), V
f = 0 (OE, WE, BHE and
BLE), V
CC
= 3.60V
Ind’l
LL
8
8
µA
Auto-A
[9]
LL
8
Auto-E
[9]
L
25
I
SB2
Automatic CE
Power-Down
Current —
CMOS Inputs
Power-Down
Current —
CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
Ind’l
LL
8
8
µA
Auto-A
[9]
LL
8
Auto-E
[9]
L
25
Notes:
6. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
7. V
IH(max.)
= V
CC
+ 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-
µs ramp time from 0 to V
CC
(min) and 200-
µs wait time after V
CC
stabilization.
9. Auto-A is available in –70 and Auto-E is available in –55.