Philips BGY280 Manual De Usuario
2000 Nov 15
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
FEATURES
• Dual band GSM amplifier
• 3.6 V nominal supply voltage
• 33.5 dBm output power for GSM1800
• 35.5 dBm output power for GSM900
• Easy output power control by DC voltage.
• Internal input and output matching.
• 3.6 V nominal supply voltage
• 33.5 dBm output power for GSM1800
• 35.5 dBm output power for GSM900
• Easy output power control by DC voltage.
• Internal input and output matching.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
PINNING - SOT559A
PIN
DESCRIPTION
1,2,3,6,9,10,11,14
Ground
4
RF output 2 (1800 MHz)
5
V
S2
(1800 MHz)
7
V
S1
(900 MHz)
8
RF output 1 (900 MHz)
12
RF input 1 (900 MHz)
13
V
C1
(900 MHz)
15
V
C2
(1800 MHz)
16
RF input 2 (1800 MHz)
Fig.1 Simplified outline
Bottom view
8
7
5
6
4
12
13
15
14
16
1
2
3
11
10
9
MBL031
QUICK REFERENCE DATA
RF performance at T
RF performance at T
mb
= 25
°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
V
S
(V)
V
C
(V)
P
L
(dBm)
G
p
(dB)
η
(%)
Z
S
, Z
L
(
Ω)
Pulsed;
δ = 2 : 8
880 to 915
3.6
≤2.2
typ. 35.5
typ. 35.5
47
50
1710 to 1785
3.6
≤2.2
typ. 33.5
typ. 33.5
40
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S1
, V
S2
DC supply voltage
V
C1,2
= 0; RF
IN
= off
−
7
V
V
C1,2
> 0.5 V; RF
IN
= on
−
5.5
V
V
C1
, V
C2
DC control voltage
−
3
V
P
D1
, P
D2
input drive power
−
10
mW
P
L1
load power 1
−
4
W
P
L2
load power 2
−
3
W
T
stg
storage temperature
−40
+100
°C
T
mb
operating mounting base temperature
−30
+100
°C