Philips CGY2014TT Manual De Usuario

2000 Oct 16

5

Philips Semiconductors

Product specification

GSM/DCS/PCS power amplifier

CGY2014TT

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;

see

“Application Note CTT0003”.

1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;

see

“Application Note CTT0003”.

DC CHARACTERISTICS
V

DD

= 3.5 V; T

amb

= 25

°

C; general operating conditions applied; peak current values measured during burst; unless

otherwise specified.

1. The supply circuit includes a (drain) MOS switch with R

DSon

= 40 m

Ω

. The battery voltage is 3.6 V (typical value).

2. No RF input signal or P

i(LB)

<

−

30 dBm; V

DD

= 1 V.

3. No RF input signal or P

i(HB)

<

−

30 dBm; V

DD

= 1 V.

V

DD

positive supply voltage

5.2

V

T

j(max)

maximum operating junction temperature

150

°

C

T

stg

storage temperature

150

°

C

P

tot

total power dissipation

note 1

2.0

W

P

i(LB)

GSM input power

10

dBm

P

i(HB)

DCS/PCS input power

10

dBm

R

th(j-c)

thermal resistance from junction to case

note 1

30

K/W

V

DD

positive supply voltage

note 1

0

3.5

4.2

V

I

DD(LB)

GSM positive peak supply current

P

i(LB)

= 0 dBm

−

2

−

A

note 2

0.5

1.5

3

A

I

DD(HB)

DCS/PCS positive peak supply current

P

i(HB)

= 3 dBm

−

1.5

−

A

note 3

0.25

1

2

A