Bourgogne ET Grasset SAS VEGRDE2 Manual De Usuario
27-07-2002
Vegas Long Range Read/Write Device
Page 5 (48)
Confidentiality Level 1
Vegrde3/EG
Bourgogne et Grasset -– ZI Beaune Savigny -– 21200 Beaune – France – Tel. +33 380 26 26 26 – Fax. +33 3 80 26 26 00
2. Data
Carriers
2.1.
HITAG Data Carriers
2.1.1. Memory Structure of the Data Carrier
The 2 KBit memory area in the EEPROM of the data carrier is divided into 16 blocks. Each
block comprises 4 pages with 4 bytes (at 8 bits) each.
Addressing is done page by page (page 0 .. 63) and access is gained either page by page or block
by block entering the respective start address (page number). In case of block read/write the data
carrier is accessed from the start address to the end of the block.
block comprises 4 pages with 4 bytes (at 8 bits) each.
Addressing is done page by page (page 0 .. 63) and access is gained either page by page or block
by block entering the respective start address (page number). In case of block read/write the data
carrier is accessed from the start address to the end of the block.
The table on the following page describes the memory configuration on the data carrier as
delivered by Mikron:
delivered by Mikron: