Samsung M393B1K70DH0-YK008 Manual De Usuario
M393B1K70DH0-YF808/YH908/YK008/YMA08
Organization : 1G x 72
Composition : 512M x 4 * 36ea
Used component part # : K4B2G0446D-HYF8/HYH9/HYK0/HYMA
# of rows in module : 2 Row
# of banks in component : 8 Banks
Feature : 30mm height & double sided component
Refresh : 8K/64ms
Bin Sort : F8(DDR3 1066@CL=7), H9(DDR3 1333@CL=9), K0(DDR3 1600@CL=11), MA(DDR3 1866@CL=13)
RCD Vendor and Revision : IDT A1(evergreen)
Composition : 512M x 4 * 36ea
Used component part # : K4B2G0446D-HYF8/HYH9/HYK0/HYMA
# of rows in module : 2 Row
# of banks in component : 8 Banks
Feature : 30mm height & double sided component
Refresh : 8K/64ms
Bin Sort : F8(DDR3 1066@CL=7), H9(DDR3 1333@CL=9), K0(DDR3 1600@CL=11), MA(DDR3 1866@CL=13)
RCD Vendor and Revision : IDT A1(evergreen)
Byte
#
Function Described
Function Supported
Hex Value
Note
YF808 YH908 YK008 YMA08 YF808 YH908 YK008 YMA08
0
Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
CRC coverage 0~116Byte, SPD Byte
Total :256Byte, SPD Byte Use :
176Byte
92h
1
SPD Revision
Version 1.1
11h
2
Key Byte / DRAM Device Type
DDR3 SDRAM
0Bh
3
Key Byte / Module Type
Registered DIMM
01h
4
SDRAM Density and Banks
2Gb 8banks
03h
5
SDRAM Addressing
Row : 15, Column : 11
1Ah
6
Module Nominal Voltage, VDD
1.35V and 1.5V
02h
7
Module Organization
2Rank / x4
08h
8
Module Memory Bus Width
ECC, 64bit
0Bh
9
Fine Timebase Dividend and Divisor
1ps
11h
10
Medium Timebase Dividend
1/8 (0.125ns)
01h
11
Medium Timebase Divisor
1/8 (0.125ns)
08h
12
SDRAM Minimum Cycle Time (tCKmin)
1.875ns
1.5ns
1.25ns
1.071ns
0Fh
0Ch
0Ah
09h
13
Reserved
Reserved
00h
14
CAS Latencies Supported, Least Significant Byte
6, 7, 8
6, 7, 8,
9
6, 7, 8,
9 , 10,
11
6, 7, 8,
9 , 10,
11, 13
11, 13
1Ch
3Ch
FCh
FCh
15
CAS Latencies Supported, Most Significant Byte
6, 7, 8
6, 7, 8,
9
6, 7, 8,
9 , 10,
11
6, 7, 8,
9 , 10,
11, 13
11, 13
00h
00h
00h
02h
16
Minimum CAS Latency Time(tAAmin)
13.125ns
69h
17
Minimum Write Recovery Time (tWRmin)
15ns
78h
18
Minimum RAS# to CAS# Delay Time (tRCDmin)
13.125ns
69h
19
Minimum Row Active to Row Active Delay Time (tRRDmin)
7.5ns
6ns
6ns
5ns
3Ch
30h
30h
28h
20
Minimum Row Precharge Time (tRPmin)
13.125ns
69h
21
Upper Nibbles for tRAS and tRC
-
11h
22
Minimum Active to Precharge Time (tRASmin), Least Significant Byte
37.5ns
36ns
35ns
34ns
2Ch
20h
18h
10h
23
Minimum Active to Active/Refresh Time (tRCmin), Least Significatn Byte
50.625ns 49.125ns 48.125ns 47.125ns
95h
89h
81h
79h
24
Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte
160ns
00h
25
Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte
160ns
05h
26
Minimum Internal Write to Read Command Delay Time (tWTRmin)
7.5ns
3Ch
27
Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
7.5ns
3Ch
28
Upper Nibble for tFAW
37.5ns
30ns
30ns
27ns
01h
00h
00h
00h
29
Minimum Four Activate WIndow Delay Time (tFAWmin), Least Significant Byte
37.5ns
30ns
30ns
27ns
2Ch
F0h
F0h
D8h
30
SDRAM Output Drivers supported
DLL off Mode, RZQ/6, RZQ/7
83h
31
SDRAM Thermal and Refresh Options
No ODTS, No ASR
01h
32
Module Thermal Sensor
with TS
80h
33
SDRAM Device Type
Standard Monolithic DRAM Device
00h
34
Fine Offset for SDRAM Minimum Cycle Time(tCKmin)
1.875ns
1.5ns
1.25ns
1.071ns
00h
00h
00h
CAh
35
Fine Offset for Minimum CAS Latency Time(tAAmin)
13.125ns
00h
SERIAL PRESENCE DETECT
NOV. 2010