Microchip Technology ARD00354 Hoja De Datos
MCP6N11
DS25073A-page 6
© 2011 Microchip Technology Inc.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND,
EN/CAL = V
DD
, V
CM
= V
DD
/2, V
DM
= 0V, V
REF
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
, C
L
= 60 pF and G
DM
= G
MIN
;
see
Parameters
Sym
Min
Typ
Max
Units
G
MIN
Conditions
AC Response
Gain Bandwidth
Product
Gain Bandwidth
Product
GBWP
— 0.50 G
MIN
—
MHz
1 to 10
—
35
—
MHz
100
Phase Margin
PM
—
70
—
°
all
Open-Loop Output
Impedance
Impedance
R
OL
—
0.9
—
k
Ω
1 to 10
—
0.6
—
k
Ω
100
Power Supply
Rejection Ratio
Rejection Ratio
PSRR
—
94
—
dB
all
f < 10 kHz
Common Mode
Rejection Ratio
Rejection Ratio
CMRR
—
104
—
dB
1 to 10 f < 10 kHz
—
94
—
dB
100
f < 10 kHz
Step Response
Slew Rate
Slew Rate
SR
—
3
—
V/µs
1 to 10 V
DD
= 1.8V
—
9
—
V/µs
V
DD
= 5.5V
—
2
—
V/µs
100
V
DD
= 1.8V
—
6
—
V/µs
V
DD
= 5.5V
Overdrive Recovery,
Input Common Mode
Input Common Mode
t
IRC
—
10
—
µs
all
V
CM
= V
SS
– 1V (or V
DD
+ 1V) to V
DD
/2,
G
DM
V
DM
= ±0.1V, 90% of V
OUT
change
Overdrive Recovery,
Input Differential
Mode
Input Differential
Mode
t
IRD
—
5
—
µs
V
DM
= V
DML
– (0.5V)/G
MIN
(or V
DMH
+ (0.5V)/G
MIN
) to 0V,
V
REF
= (V
DD
– G
DM
V
DM
)/2,
90% of V
OUT
change
Overdrive Recovery,
Output
Output
t
OR
—
8
—
µs
G
DM
= 2G
MIN
, G
DM
V
DM
= 0.5V
DD
to 0V,
V
REF
= 0.75V
DD
(or 0.25V
DD
),
90% of V
OUT
change
Noise
Input Noise Voltage
Input Noise Voltage
E
ni
—
570/G
MIN
—
µV
P-P
1 to 10 f = 0.1 Hz to 10 Hz
—
18
—
µV
P-P
100
Input Noise Voltage
Density
Density
e
ni
—
950/G
MIN
—
nV/
√Hz 1 to 10 f = 100 kHz
—
35
—
nV/
√Hz
100
Input Current Noise
Density
Density
i
ni
—
1
—
fA/
√Hz
all
f = 1 kHz