Microchip Technology AC244045 Hoja De Datos

© 2009 Microchip Technology Inc.

DS41341E-page 219

D130

E

P

Cell Endurance

100

1k

—

E/W

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

D131

V

DD

 for Read

V

MIN

—

—

V

Voltage on MCLR/V

PP

 during 

Erase/Program

8.0

—

9.0

V

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

V

DD

 for Bulk Erase

2.7

3

—

V

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

D132

V

PEW

V

DD

 for Write or Row Erase

2.7

—

—

V

V

MIN

 = Minimum operating voltage

V

MAX

 = Maximum operating 

voltage

I

PPPGM

Current on MCLR/V

PP

 during 

Erase/Write

—

—

5.0

mA

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

I

DDPGM

Current on V

DD

 during Erase/

Write

—

5.0

mA

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

D133

T

PEW

Erase/Write cycle time

—

2.8

ms

Temperature during programming: 
10°C 

≤ T

A

 

≤ 40°C

D134

T

RETD

Characteristic Retention

40

—

—

Year

Provided no other specifications 
are violated

D135

Charging current

—

200

—

μ

A

D135A

Source/sink capability when 
charging complete

—

0.0

—

mA

Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C 

≤ T

A

 

≤ +85°C for industrial

-40°C 

≤ T

A

 

≤ +125°C for extended

TBD = To Be Determined

*

These parameters are characterized but not tested.

†

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are 
not tested.

Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external 

clock in RC mode.

2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent 

normal operating conditions. Higher leakage current may be measured at different input voltages.

4: Including OSC2 in CLKOUT mode.