STMicroelectronics M48Z02-150PC1 Memory IC M48Z02-150PC1 Hoja De Datos

Doc ID 2420 Rev 9

I

CC

 transients, including those produced by output switching, can produce voltage 

fluctuations, resulting in spikes on the V

CC

 bus. These transients can be reduced if 

capacitors are used to store energy which stabilizes the V

CC

 bus. The energy stored in the 

bypass capacitors will be released as low going spikes are generated or energy will be 
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in 

) is recommended in order to provide the needed filtering.

In addition to transients that are caused by normal SRAM operation, power cycling can 
generate negative voltage spikes on V

CC

 that drive it to values below V

SS

 by as much as 

one volt. These negative spikes can cause data corruption in the SRAM while in battery 
backup mode. To protect from these voltage spikes, STMicroelectronics recommends 
connecting a Schottky diode from V

CC

 to V

SS

 (cathode connected to V

CC

, anode to V

SS

). 

Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is 
recommended for surface mount.

AI02169

VCC

0.1µF

DEVICE

VCC

VSS