Freescale Semiconductor Demonstration Board for Freescale MC9S12XHY256 Microcontroller DEMO9S12XHY256 DEMO9S12XHY256 Manual De Usuario

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Electrical Characteristics
MC9S12XHY-Family Reference Manual, Rev. 1.04
740
Freescale Semiconductor
A.3.1.14
Erase Verify D-Flash Section (FCMD=0x10)
Erase Verify D-Flash for a given number of words N
W
is given by .
A.3.1.15
D-Flash Programming (FCMD=0x11)
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 40 MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby N
w
denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
crossed.
The maximum programming time can be calculated using the following equation
A.3.1.16
Erase D-Flash Sector (FCMD=0x12)
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
Maximum D-Fash sector erase times can be calculated using the following equation.
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
t
350
1
f
NVMBUS
----------------------------
=
t
check
840
N
W
+
(
)
1
f
NVMBUS
----------------------------
t
dpgm
15
54 N
w
(
)
16 BC
(
)
+
+
(
)
1
f
NVMOP
-------------------
460
640 N
W
(
)
500 BC
(
)
+
+
(
)
1
f
NVMBUS
---------------------
+
=
t
dpgm
15
56 N
w
(
)
16 BC
(
)
+
+
(
)
1
f
NVMOP
-------------------
460
840 N
W
(
)
500 BC
(
)
+
+
(
)
1
f
NVMBUS
---------------------
+
=
t
eradf
5025
1
f
NVMOP
-------------------------
700
1
f
NVMBUS
----------------------------
+
t
eradf
20100
1
f
NVMOP
-------------------------
3300
1
f
NVMBUS
----------------------------
+