Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT Hoja De Datos

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192 KByte Flash Module (S12FTMRG192K2V1)
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
1089
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the EEPROM memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
30.1.2.2
EEPROM Features
4Kbytes of EEPROM memory composed of one 4 Kbyte Flash block divided into 1024 sectors of
4 bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of EEPROM memory
Ability to program up to four words in a burst sequence
30.1.2.3
Other Flash Module Features
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
30.1.3
Block Diagram
The block diagram of the Flash module is shown in
.