Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT Hoja De Datos

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Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
1247
In
A.16
ADC Conversion Result Reference
The reference voltage V
DDF
 is measured under the conditions shown in
. The value stored in
the IFR is the average of eight consecutive conversions at T
j
=150
°C
and eight consecutive conversions at
T
j
=-40
°C
.
Table A-48. SPI Slave Mode Timing Characteristics
Conditions are 4.5 V < V
DD35
< 5.5 V junction temperature from –40
°C to T
Jmax
.
Num
C
Characteristic
Symbol
Min
Typ
Max
Unit
1
D
SCK Frequency
f
sck
DC
1
/4
f
bus
1
D
SCK Period
t
sck
4
t
bus
2
D
Enable Lead Time
t
L
4
t
bus
3
D
Enable Trail Time
t
T
4
t
bus
4
D
Clock (SCK) High or Low Time
t
wsck
4
t
bus
5
D
Data Setup Time (Inputs)
t
su
8
ns
6
D
Data Hold Time (Inputs)
t
hi
8
ns
7
D
Slave Access Time (time to data
active)
t
a
20
ns
8
D
Slave MISO Disable Time
t
dis
22
ns
9
D
Data Valid after SCK Edge
t
vsck
1
1
0.5t
bus
  added due to internal synchronization delay
ns
10
D
Data Valid after SS fall
t
vss
ns
11
D
Data Hold Time (Outputs)
t
ho
20
ns
12
D
Rise  and Fall Time Inputs
t
rfi
9
ns
13
D
Rise and Fall Time Outputs
t
rfo
9
ns
Table A-49. Measurement Conditions
Description
Symbol
Value
Unit
Regulator supply voltage
V
DDR
5
V
I/O supply voltage
V
DDX
5
V
Analog supply voltage
V
DDA
5
V
ADC reference voltage
V
RH
5
V
ADC clock
f
ADCCLK
2
MHz
ADC sample time
t
SMP
4
ADC clock cycles
Bus frequency
f
bus
24
MHz
Junction temperature
T
j
150 and -40
°C
Code execution
from RAM
28
0.5 t
bus
+
28
0.5 t
bus
+