Intel E1400 BX80557E1400 Hoja De Datos

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Datasheet
81
Thermal Specifications and Design Considerations
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as I
FW 
.
3.
Preliminary data. Will be characterized across a temperature range of 50–80 °C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior as 
exemplified by the equation for the collector current:
I
C
 = I
S
 * (e 
qV
BE
/n
Q
kT
 –1)
Where I
S
 = saturation current, q = electronic charge, V
BE
 = voltage across the transistor 
base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute 
temperature (Kelvin).
6.
The series resistance, R
T,
 provided in the Diode Model Table (
) can be used for 
more accurate readings as needed. 
The Intel
®
 Celeron
®
 Dual-Core processor E1000 series does not support the diode 
correction offset that exists on other Intel processors.
Table 29.
Thermal “Diode” Parameters using Transistor Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
I
FW
Forward Bias Current
5
200
µA
1, 2
I
E
Emitter Current
5
200
n
Q
Transistor Ideality
0.997
1.001
1.005
-
3, 4, 5
Beta
0.391
0.760
3, 4
R
T
Series Resistance
2.79
4.52
6.24
Ω
3, 6
Table 30.
Thermal Diode Interface
Signal Name
Land Number
Signal 
Description
THERMDA
AL1
diode anode
THERMDC
AK1
diode cathode