Atmel SAM4S-XPLD Atmel ATSAM4S-XPLD ATSAM4S-XPLD Hoja De Datos

 33

SAM4S [DATASHEET]

11100E–ATARM–24-Jul-13

Erasing the memory can be performed as follows:



On a 512-byte page inside a sector, of 8K Bytes 

Note:

EWP and EWPL commands can be only used in 8 KBytes sectors.



On a 4-Kbyte Block inside a sector of 8 KBytes/48 Kbytes/64 KBytes

Note:

Erase Page commands  can be only used with FARG[1:0] = 1



On a sector of 8 KBytes/48 KBytes/64 KBytes 

Note:

Erase Page commands  can be only used with FARG[1:0] = 2



On chip 

The Write commands of the Flash cannot be used under 330 kHz.

The Enhanced Embedded Flash Controller manages accesses performed by the masters of the system. It enables
reading the Flash and writing the write buffer. It also contains a User Interface, mapped on the APB.

The Enhanced Embedded Flash Controller ensures the interface of the Flash block. 

It manages the programming, erasing, locking and unlocking sequences of the Flash using a full set of commands.

One of the commands returns the embedded Flash descriptor definition that informs the system about the Flash
organization, thus making the software generic.

The user needs to set the number of wait states depending on the frequency used:

For more details, refer to the “AC Characteristics” sub-section of the product “Electrical Characteristics”.

Several lock bits are used to protect write and erase operations on lock regions. A lock region is composed of several
consecutive pages, and each lock region has its associated lock bit.

2 * 8 KBytes

1 * 48 KBytes

15 * 64 KBytes

2 * 8 KBytes

1 * 48 KBytes

7  * 64 KBytes

2 * 8 KBytes

1 * 48 KBytes

3 * 64 KBytes

Flash 1 MBytes

Flash 512 KBytes

Flash 256 KBytes

SAM4SD32

256 (128 + 128)

8 Kbytes

SAM4SD16

128 (64 + 64)

8 Kbytes

SAM4S16/SA16

128

8 Kbytes

SAM4S8

64

8 Kbytes