Atmel ARM-Based Evaluation Kit for SAM4S16C, 32-Bit ARM® Cortex® Microcontroller ATSAM4S-WPIR-RD ATSAM4S-WPIR-RD Hoja De Datos
Los códigos de productos
ATSAM4S-WPIR-RD
SAM4S Series [DATASHEET]
Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14
364
One error can be detected in EEFC_FSR after this sequence:
Command Error: a bad keyword has been written in EEFC_FCR.
To write the user signature, the sequence is:
Write the full page, at any page address, within the internal memory area address space.
Send the Write user signature command (WUS) by writing EEFC_FCR with the WUS command.
When programming is completed, the FRDY bit in EEFC_FSR rises. If an interrupt has been enabled by
setting the FRDY bit in EEFC_FMR, the corresponding interrupt line of the interrupt controller is activated.
Two errors can be detected in EEFC_FSR after this sequence:
Command Error: a bad keyword has been written in EEFC_FCR.
Flash Error: at the end of the programming, the WriteVerify test of the Flash memory has failed.
To erase the user signature, the sequence is:
Send the Erase user signature command (EUS) by writing EEFC_FCR with the EUS command.
When programming is completed, the FRDY bit in EEFC_FSR rises. If an interrupt has been enabled by
setting the FRDY bit in EEFC_FMR, the corresponding interrupt line of the interrupt controller is activated.
Two errors can be detected in EEFC_FSR after this sequence:
Command Error: a bad keyword has been written in EEFC_FCR.
Flash Error: at the end of the programming, the EraseVerify test of the Flash memory has failed.