Linear Technology LTM4600HV Demo Board, 28V, 10A Step-Down Power µModule Regulator DC823B-B DC823B-B Hoja De Datos
Los códigos de productos
DC823B-B
LTM4600HV
3
4600hvfc
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Output Specifi cations
I
OUTDC
Output Continuous Current Range
(See Output Current Derating Curves for
Different V
(See Output Current Derating Curves for
Different V
IN
, V
OUT
and T
A
)
V
IN
= 12V, V
OUT
= 1.5V
V
IN
= 24V, V
OUT
= 2.5V (Note 3)
0
0
0
10
10
10
A
A
A
ΔV
OUT(LINE)
V
OUT
Line Regulation Accuracy
V
OUT
= 1.5V. FCB = 0V, I
OUT
= 0A,
V
IN
= 4.5V to 28V
●
0.15
0.3
%
ΔV
OUT(LOAD)
V
OUT
Load Regulation Accuracy
V
OUT
= 1.5V. FCB = 0V, I
OUT
= 0A to 10A
V
IN
= 5V
V
IN
= 12V (Note 4)
●
±1
±1.5
%
%
%
V
OUT(AC)
Output Ripple Voltage
V
IN
= 12V, V
OUT
= 1.5V, FCB = 0V, I
OUT
= 0A
10
15
mV
P-P
fs
Output Ripple Voltage Frequency
FCB = 0V, I
OUT
= 5A, V
IN
= 12V, V
OUT
= 1.5V
850
kHz
t
START
Turn-On Time
V
OUT
= 1.5V, I
OUT
= 1A
V
IN
= 12V
V
IN
= 5V
0.5
0.7
0.7
ms
ms
ms
ΔV
OUTLS
Voltage Drop for Dynamic Load Step
V
OUT
= 1.5V, Load Step: 0A/μs to 5A/μs
C
OUT
= 3 • 22μF 6.3V, 470μF 4V POSCAP,
See Table 2
36
mV
t
SETTLE
Settling Time for Dynamic Load Step V
IN
= 12V Load: 10% to 90% to 10% of Full Load
25
μs
I
OUTPK
Output Current Limit
Output Voltage in Foldback
V
IN
= 24V, V
OUT
= 2.5V
V
IN
= 12V, V
OUT
= 1.5V
V
IN
= 5V, V
OUT
= 1.5V
17
17
17
17
17
A
A
A
A
A
Control Stage
V
OSET
Voltage at V
OSET
Pin
I
OUT
= 0A, V
OUT
= 1.5V
●
0.591
0.594
0.594
0.6
0.6
0.6
0.609
0.606
0.606
V
V
V
V
RUN/SS
RUN ON/OFF Threshold
0.8
1.5
2
V
I
RUN(C)/SS
Soft-Start Charging Current
V
RUN/SS
= 0V
–0.5
–1.2
–3
μA
I
RUN(D)/SS
Soft-Start Discharging Current
V
RUN/SS
= 4V
0.8
1.8
3
μA
V
IN
– SV
IN
EXTV
CC
= 0V, FCB = 0V
100
mV
I
EXTVCC
Current into EXTV
CC
Pin
EXTV
CC
= 5V, FCB = 0V, V
OUT
= 1.5V, I
OUT
= 0A
16
mA
R
FBHI
Resistor Between V
OUT
and V
OSET
Pins
100
kΩ
V
FCB
Forced Continuous Threshold
0.57
0.6
0.63
V
I
FCB
Forced Continuous Pin Current
V
FCB
= 0.6V
–1
–2
μA
PGOOD Output
ΔV
OSETH
PGOOD Upper Threshold
V
OSET
Rising
7.5
10
12.5
%
ΔV
OSETL
PGOOD Lower Threshold
V
OSET
Falling
–7.5
–10
–12.5
%
ΔV
OSET(HYS)
PGOOD Hysteresis
V
OSET
Returning
2
%
V
PGL
PGOOD Low Voltage
I
PGOOD
= 5mA
0.15
0.4
V
The
●
denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C, V
IN
= 12V. External C
IN
= 120μF, C
OUT
= 200μF/Ceramic per typical
application (front page) confi guration.
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTM4600HVE is guaranteed to meet performance
specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTM4600HVE is guaranteed to meet performance
specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C
operating temperature range are assured by design, characterization
and correlation with statistical process controls. The LTM46000HVMP
is guaranteed and tested over the –55°C to 125°C temperature range.
For output current derating at high temperature, please refer to Thermal
Considerations and Output Current Derating discussion.
Note 3: Refer to current de-rating curves and thermal application note.
Note 4: Test assumes current derating versus temperature.
and correlation with statistical process controls. The LTM46000HVMP
is guaranteed and tested over the –55°C to 125°C temperature range.
For output current derating at high temperature, please refer to Thermal
Considerations and Output Current Derating discussion.
Note 3: Refer to current de-rating curves and thermal application note.
Note 4: Test assumes current derating versus temperature.