Bourns N/A TIP 130 NPN Case type TO 220 I(C) 12 A TIP130-S Hoja De Datos
Los códigos de productos
TIP130-S
TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
NPN SILICON POWER DARLINGTONS
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
(see Note 5)
TIP130
TIP131
TIP132
60
80
100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
I
B
= 0
I
B
= 0
I
B
= 0
TIP130
TIP131
TIP132
0.5
0.5
0.5
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
0.2
0.2
0.2
1
1
1
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
5
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 4 A
(see Notes 5 and 6)
500
1000
15000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 16 mA
I
B
= 30 mA
I
C
= 4 A
I
C
= 6 A
(see Notes 5 and 6)
2
3
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
I
C
= 4 A
(see Notes 5 and 6)
2.5
V
C
obo
Output capacitance
V
CB
= 10 V
I
E
= 0
200
pF
V
EC
Parallel diode
forward voltage
I
E
= 8 A
I
B
= 0
(see Notes 5 and 6)
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θJC
Junction to case thermal resistance
1.78
°C/W
R
θJA
Junction to free air thermal resistance
62.5
°C/W