Bourns Surge protection SMT 30 Parts PN-DESIGNKIT-15 Hoja De Datos
Los códigos de productos
PN-DESIGNKIT-15
Features
■
High-speed switching
■
Surge withstand
■
RoHS compliant*
Applications
■
Personal Digital Assistants (PDAs)
■
Mobile phones and accessories
■
Memory card protection
■
SIM card port protection
■
Portable electronics
Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
CDSOT23-S2004 - Switching Diode Array
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
General Information
The Bourns
®
Model CDSOT23-S2004 device is a high-speed switching diode array
offering a Working Peak Reverse Voltage of 240 V and a Minimum Breakdown Voltage
of 300 V. The SOT23 packaged device will mount directly onto the industry standard
SOT23 footprint. Bourns
of 300 V. The SOT23 packaged device will mount directly onto the industry standard
SOT23 footprint. Bourns
®
Chip Diodes conform to JEDEC standards, are easy to
handle with standard pick and place equipment and their fl at confi guration minimizes
roll away.
roll away.
Parameter
Symbol
CDSOT23-S2004
Unit
Peak Repetitive Peak Reverse Voltage
V
RRM
300
V
Working Peak Reverse Voltage
V
RWM
240
V
DC Blocking Voltage
V
R
240
V
RMS Reverse Voltage
V
R
(RMS) 170
V
Forward Continuous Current
(Note 2)
I
FM
225
mA
Peak Repetitive Forward Current
(Note 2)
I
FRM
625
mA
Peak Forward Surge Current
@ t = 1.0 µs
@ t = 1.0 s
@ t = 1.0 µs
@ t = 1.0 s
I
FSM
4.0
1.0
1.0
A
Power Dissipation
(Note 2)
P
D
350
mW
Storage Temperature
T
STG
-55 to +150
°C
Operating Temperature
T
OPR
-55 to +150
°C
3
1
2
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
(Note 1)
@ I
R
= 100 µA
V
BR
300
V
Reverse Leakage Current
(Note 1)
@ V
R
= 240 V
I
R
100
nA
Forward Voltage
@ I
@ I
F
= 20 mA
@ I
F
= 100 mA
V
F
0.50
0.75
0.75
0.87
1.00
1.00
V
Diode Capacitance @ V
R
= 0 V, f = 1 MHz
C
T
3
5
pF
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
357
°C/W
Reverse Recovery Time
@ I
@ I
F
= I
R
= 30 mA, I
RR
= 3.0 mA, R
L
= 100
Ω
t
rr
50
ns
*RoHS COMPLIANT