Nxp Semiconductors PIP3210-R Manuel D’Utilisation
Philips Semiconductors
Product specification
TOPFET high side switch
PIP3210-R
Fig.10. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 16 V, V
IG
= 0 V, V
LG
= 0 V
Fig.11. Typical off-state leakage current.
I
L
= f(T
j
); conditions V
BL
= 16 V = V
BG
, V
IG
= 0 V.
Fig.12. Status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.13. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
≥
9 V
Fig.14. Supply undervoltage thresholds.
V
BG(UV)
= f(T
j
); conditions V
IG
= 5 V; V
BL
≤
2 V
Fig.15. Supply overvoltage thresholds.
V
BG(OV)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 100 mA
100E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
I
B
/ A
T
j
/
O
C
max.
typ.
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T
j
/
O
C
I
L(OC)
/ A
typ.
min.
max.
10E-12
00E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
T
j
/
O
C
I
L
/ A
max.
typ.
2.5
3.5
4.5
5.5
-50
0
50
100
150
200
T
j
/
O
C
V
BG(UV)
/ V
typ.
on
off
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
T
j
/
O
C
I
S
/ A
max.
typ.
35
40
45
50
55
-50
0
50
100
150
200
T
j
/
O
C
V
BG(OV)
/ V
max.
min.
off
on
September 2001
8
Rev 1.000