Samsung 1TB 850 EVO MZ-75E1T0B/AM Manuel D’Utilisation
Codes de produits
MZ-75E1T0B/AM
Features
What is 3D V-NAND and how does it
differ from existing technology?
Samsung’s innovative 3D V-NAND flash memory
architecture breaks through density limitations,
performance and endurance of today’s conventional
planar NAND architecture. Samsung 3D V-NAND
stacks 32 cell layers vertically resulting in higher
density and better performance utilizing a
smaller footprint.
architecture breaks through density limitations,
performance and endurance of today’s conventional
planar NAND architecture. Samsung 3D V-NAND
stacks 32 cell layers vertically resulting in higher
density and better performance utilizing a
smaller footprint.
Optimize daily computing with
TurboWrite technology for unrivaled
TurboWrite technology for unrivaled
read/write speeds
Achieve the ultimate read/write performance to
maximize your everyday computing experience with
Samsung’s TurboWrite technology. You can obtain up
to 1.9x faster performance than the award-winning
Samsung 840 EVO
maximize your everyday computing experience with
Samsung’s TurboWrite technology. You can obtain up
to 1.9x faster performance than the award-winning
Samsung 840 EVO
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. The 850 EVO delivers
class-leading performance
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in sequential read
540 MB/s and write 520 MB/s speeds. Plus,
you also gain optimized random performance in all
QD for better real-world performance.
you also gain optimized random performance in all
QD for better real-world performance.
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Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO)
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Performance compared to 3-Bit MLC-class SSD drives
Get into the fast lane with
the improved RAPID mode
the improved RAPID mode
Samsung’s Magician software supports RAPID mode
for 2x faster performance
for 2x faster performance
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by utilizing unused PC
memory (DRAM) as high-speed cache storage. The
newest version of Samsung Magician supports up to
a 4GB cache on a system with 16GB of DRAM.
newest version of Samsung Magician supports up to
a 4GB cache on a system with 16GB of DRAM.
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PCMARK7 RAW(250GB) : 7500 > 15000(Rapid mode)
Guaranteed endurance and reliability
bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and
reliability by doubling the endurance
reliability by doubling the endurance
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compared to
the previous generation 840 EVO
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and featuring a
class-leading 5-year warranty. With enhanced
long-term reliability, the 850 EVO assures long-term
dependable performance of up to 30% longer than
the previous generation 840 EVO.
long-term reliability, the 850 EVO assures long-term
dependable performance of up to 30% longer than
the previous generation 840 EVO.
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Sustained Performance (250GB) – 3300 IOPS (840 EVO) > 6500 IOPS (850
EVO), performance measured after 12-hour “Random Write” test.
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Highest among 3-bit MLC-class SSD drives.
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