Fairchild Semiconductor N/A QSD123 Fiche De Données

Operating Temperature

T

OPR

-40 to +100

°C

Storage Temperature

T

STG

-40 to +100

°C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec

°C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec

°C

Collector-Emitter Voltage

V

CE

30

V

Emitter-Collector Voltage

V

EC

5

V

Power Dissipation

(1)

P

D

100

mW

(T

A

= 25°C unless otherwise specified)

Peak Sensitivity Wavelength

!

PS

—

880

—

nm

Reception Angle

"

—

±12

—

Deg.

Collector Emitter Dark Current

V

CE

= 10 V, E

e 

= 0

I

CEO

—

—

100

nA

Collector Emitter Breakdown

I

C

= 1 mA

BV

CEO

30

—

—

V

Emitter Collector Breakdown

I

E

= 100 µA

BV

ECO

5

—

—

V

On-State Collector Current

(5)

QSD122

1.00

—

6.00

QSD123

E

e

= 0.5 mW/cm

, V

CE

= 5 V

I

C (ON)

4.00

—

16.00

mA

QSD124

6.00

—

—

Saturation Voltage

(5)

E

e

= 0.5 mW/cm

, I

C

= 0.5 mA

V

CE (SAT)

—

—

0.4

V

Rise Time

V

CC

= 5 V, R

L

= 100 V I

C

= 0.2 mA

t

r

—

7

—

µs

Fall Time

t

f

—

7

—

(T

A

=25°C)

NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 

1/16”

(1.6mm) minimum from housing.

5. 

! = 880 nm, AlGaAs.